Accession Number : AD0443258

Title :   HIGH EFFICIENCY TRANSISTOR STRUCTURES.

Descriptive Note : Final progress rept. no. 8, 1 Jul 62-31 Mar 64,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Clark, Scot ; Shuey, Edwin ; Holcomb, Stanley

Report Date : 31 MAR 1964

Pagination or Media Count : 242

Abstract : This report describes the development, design and fabrication of micropower silicon integrated circuits, using both planar transistor technologh and thin-film technology. Techniques and developmental approaches for Induced-channel Field-Effect Transistors, Diffused Field-effect Development, and Bi-polar Transistors are described. A discussion on the development of Nichrome Thin-film Resistors, Aluminum-Silicon Dioxide Resistors, Mo-Ta Resistors, Lead-Glass Capacitors, Silicon Monoxide Capacitors, Silicon Dioxide Capacitors, and Titanium Dioxide Capacitors is presented. The circuit designs with Channel FET, Diffused Field-effect, and Small Geometry Bi-polar Transistors are outlined. A thorough discussion of the Small Area Bi-polar transistor - the device considered best suited for the digital network is presented. (Author)

Descriptors :   (*TRANSISTORS, INTEGRATED CIRCUITS), (*INTEGRATED CIRCUITS, SILICON), PROCESSING, SEMICONDUCTING FILMS, MANUFACTURING, ELECTRIC FIELDS, DIFFUSION, FIXED RESISTORS, DIGITAL SYSTEMS, NICKEL COMPOUNDS, CHROMIUM COMPOUNDS, METAL FILMS, ALUMINUM, SILICON COMPOUNDS, OXIDES, MONOXIDES, DIOXIDES, ELECTRICAL PROPERTIES, LEAD(METAL), GLASS, FIXED CAPACITORS, TITANIUM, MOLECULAR ELECTRONICS, MOLYBDENUM COMPOUNDS, TANTALUM COMPOUNDS, LINEAR SYSTEMS, PACKAGED CIRCUITS, TRANSISTOR AMPLIFIERS, COMPUTER LOGIC.

Distribution Statement : APPROVED FOR PUBLIC RELEASE