Accession Number : AD0447222

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Descriptive Note : Final technical rept. 1 June 63-31 May 64,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Clark, R. Scot ; Orr, Coy D.

Report Date : JUN 1964

Pagination or Media Count : 112

Abstract : Reactively sputtered thin films of tantalum oxide have been deposited onto thermally oxidized single crystal silicon. Either resistive or dielectric films result by control of oxygen partial pressure. Resistors have been made offering 6.7 to 67 megohms/sq in and TCR values + 144 to + 700 ppm/degree C. Capacitors have V sub bd of 64 to 8 volts with 0.23 to 2.61 mF/ sq in respectively, and TCC of + 183 to + 404 ppm/ degree C. Contact metals and photolithographic techniques were developed. (Author)

Descriptors :   *FILMS, *DIELECTRIC FILMS, *RESISTORS, *CAPACITORS, *TANTALUM, ELECTRICAL IMPEDANCE, SUBSTRATES, SPUTTERING, OXIDATION, TANTALUM COMPOUNDS, OXIDES, METAL FILMS, ELECTRICAL RESISTANCE, CAPACITANCE, SEMICONDUCTORS, SILICON, SILICON COMPOUNDS, PRINTED CIRCUITS, MINIATURE ELECTRONIC EQUIPMENT, MICROELECTRONICS, ELECTROCHEMISTRY, GOLD, MOLYBDENUM, VAPOR PLATING.

Distribution Statement : APPROVED FOR PUBLIC RELEASE