Accession Number : AD0466136

Title :   TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.

Descriptive Note : Quarterly progress rept. no. 3, 1 Jan-31 Mar 65,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ

Personal Author(s) : Dawson, R. ; Mitchell, M.

Report Date : 31 MAR 1965

Pagination or Media Count : 23

Abstract : Efforts were continued on a program to develop and evaluate a metal oxide semiconductor (MOS) field effect transistor for use as an R-F stage with low power dissipation in the front end of a VHF amplifier. Work was directed toward the fabrication, development of associated processes, and evaluation of the Tetrode MOS. Developmental work was done on fabrication techniques which minimize center point capacitance and increase gate and drain breakdown. The present 100-MC Tetrode devices yield average power gains of 18db and noise figures of about 3db when operated at IDS = 2ma and VDS = 6 volts. The average gate breakdown is 85 volts with drain breakdown voltages greater than 15 volts. The transconductance of these units averages 2500 microns mhos. Typical AGC performance yields a 40db attenuation range with excellent dynamic signal swing and very low cross modulation over the entire range. Areas for futher work are diffusion techniques, contact metalization and channel oxides. (Author)

Descriptors :   (*TRANSISTORS, VERY HIGH FREQUENCY), (*TRANSISTOR AMPLIFIERS, VERY HIGH FREQUENCY), (*RADIOFREQUENCY AMPLIFIERS, TRANSISTOR AMPLIFIERS), MANUFACTURING, METALS, OXIDES, RADIOFREQUENCY POWER, PROCESSING, CAPACITANCE, ELECTRIC FIELDS, VOLTAGE, GAIN, NOISE(RADIO), ELECTRICAL PROPERTIES, AUTOMATIC GAIN CONTROL, ATTENUATION, DISTORTION, FIXED CONTACTS, DIFFUSION.

Distribution Statement : APPROVED FOR PUBLIC RELEASE