Accession Number : AD0471763

Title :   EXCESS NOISE IN SEMICONDUCTORS.

Descriptive Note : Status rept. no. 4, 1 Jul-30 Sep 65,

Corporate Author : IIT RESEARCH INST CHICAGO IL

Personal Author(s) : Brophy, James J.

Report Date : 01 OCT 1965

Pagination or Media Count : 3

Abstract : The noise correlation spectrum between optical emission fluctuations and forward current noise of a GaAs luminescent diode was measured. The spectrum exhibits two characteristic time constants of 12 and 0.5 milliseconds, which presumably are associated with carrier transitions in the junction region. The correlated noise magnitude increases linearly with the dc forward current. As a preliminary to optical absorption fluctuation measurements, the radiant energy from a tungsten ribbon lamp has been determined using a novel self-calibrating technique. This technique uses the noise and signal response characteristics of a PbS cell and is self-calibrating. (Author)

Descriptors :   (*NOISE, SEMICONDUCTORS), (*SEMICONDUCTORS, NOISE), GALLIUM ALLOYS, ARSENIC ALLOYS, SEMICONDUCTOR DIODES, MEASUREMENT, LUMINESCENCE, EMISSIVITY.

Distribution Statement : APPROVED FOR PUBLIC RELEASE