Accession Number : AD0474743
Title : DEVELOPMENT OF AN ACTIVE THIN-FILM DEVICE.
Descriptive Note : Final rept.,
Corporate Author : NAVAL ORDNANCE LAB WHITE OAK MD
Personal Author(s) : Skalski, James F.
Report Date : 27 SEP 1965
Pagination or Media Count : 54
Abstract : Epitaxial techniques were utilized in an effort to produce an active thin-film device using the lead-salt semiconductors (PbS, PbTe, PbSe). The project was centered around the prototype development of a superior single-crystal thin-film, field-effect transistor. Field-effect modulation was observed and triode characteristics obtained in some devices in both enhancement and depletion modes of operation. Saturation of characteristics (pentode behavior) could not be observed without dielectric breakdown of the gate insulator film. Drift effects were noted. The operating units had low transconductance values. More effort is required to fully develop this device, concentrating on the undesirable drift effects,unstable insulator films, and control of film carrier concentration. (Author)
Descriptors : *SEMICONDUCTING FILMS), (*TRANSISTORS, SEMICONDUCTORS, EPITAXIAL GROWTH, SINGLE CRYSTALS, SEMICONDUCTOR DEVICES, LEAD ALLOYS, TELLURIUM ALLOYS, SELENIUM ALLOYS, LEAD COMPOUNDS, SULFIDES, SUBSTRATES, MANUFACTURING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE