Accession Number : AD0474829

Title :   ELECTRON INJECTION LASER.

Descriptive Note : Quarterly rept. no. 1, 1 Jun-31 Aug 65,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Rupprecht, H.

Report Date : DEC 1965

Pagination or Media Count : 24

Abstract : This report describes the work done in the first quarter of the contract between June 1 and August 31, 1965. Studies have been undertaken to reduce the temperature dependence of GaAs injection laser diodes, resulting in lower absolute values at room temperature. The performance of single step diffused diodes is compared with that of solution regrown ones. Data about spontaneous linewidth, voltage-current relationship and temperature dependence of laser thresholds are given. Experiments are described to determine the nature of traps involved in the turn on delay of lasers, discussed in a previous report. Finally, conditions are given for the fabrication of planar laser structures which are designed for an improved high power performance. Some preliminary results on these diodes are reported. (Author)

Descriptors :   (*LASERS, PERFORMANCE(ENGINEERING)), GALLIUM ALLOYS, ARSENIC ALLOYS, MANUFACTURING, SUBSTRATES, SEMICONDUCTOR DIODES, DOPING, SILICON COMPOUNDS, DIOXIDES, PYROLYSIS, CRYSTAL GROWTH, EPITAXIAL GROWTH, IMPURITIES, INJECTION.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE