Accession Number : AD0474878
Title : THIN FILM IMAGE CONVERTER.
Descriptive Note : Interim technical progress rept. no. 8, 24 Feb-23 Aug 65,
Corporate Author : HONEYWELL RESEARCH CENTER HOPKINS MN
Personal Author(s) : Kruse, Paul W. ; Pribble, Fred C. ; Schuldt, Spencer B. ; Schulze, Richard G.
Report Date : 20 SEP 1965
Pagination or Media Count : 72
Abstract : The epitaxial growth of Ge on GaAs was stucied. Although both open-tube and closed-tube growth methods were attempted, only by the former could single crystal layers be prepared. The Ge layers were invariably n-type regardless of the type of the source Ge. Hall effect studies failed to identify the unknown donor. The current-voltage characteristics of n-Ge-p-GaAs heterojunctions have been compared to those of n-Ge-n-GaAs heterojunctions. In contrast to the former, the latter have higher leakage currents with softer breakdowns in the reverse bias direction and different slopes of the forward characteristics. The gain and resolution of a broad area phototransistor under low and moderate illumination were analyzed. Expressions were developed which relate these parameters to the electrical properties of the emitter and base regions. An analysis of the problem of carrier transport across a reverse-biased heterojunction was initiated. The bibliography on electroluminescence contained in prior reports was updated. A bibliography on electroluminescence contained in prior reports was updated. A bibliography of research heteromunctions was compiled. (Author)
Descriptors : (*IMAGE TUBES, ARMY RESEARCH), SEMICONDUCTORS, CRYSTAL GROWTH, EPITAXIAL GROWTH, GERMANIUM, GALLIUM ALLOYS, ARSENIC ALLOYS, SINGLE CRYSTALS, HALL EFFECT, ELECTROLUMINESCENCE.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE