Accession Number : AD0475992
Title : FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Descriptive Note : Semiannual rept. no. 1, 4 Jan-3 Jul 65,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
Personal Author(s) : Bair, Byron L.
Report Date : DEC 1965
Pagination or Media Count : 104
Abstract : Efforts concern a program to investigate the physical and chemical mechanisms which contribute to long term degradation of diode parameters. The entire program includes work elements of isolation of the mechanisms, establishment of the mechanism characteristic rates, determination of probability of occurrence factors for processing variables and the proposal and verification of deterministic and probabilistic mathematical models including these factors. The first section of this report presents the background information for the silicon planar epitaxial diodes chosen as the vehicles for the program. The second section discusses the last manufacturing process steps and the test flow of the diodes. The results of the physics of failure studies and the planned work effort in this area are contained in the third section. (Author)
Descriptors : *SEMICONDUCTOR DIODES, *FAILURE(ELECTRONICS), CHEMICAL PROPERTIES, DEGRADATION, ELECTRICAL PROPERTIES, PROBABILITY, PROCESSING, MATHEMATICAL MODELS, SILICON, EPITAXIAL GROWTH, MANUFACTURING, RELIABILITY(ELECTRONICS).
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE