Accession Number : AD0476696
Title : IMPROVED THIN-FILM SOLAR CELLS.
Descriptive Note : Final rept. 16 Nov 64-15 Nov 65,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Perkins, David M. ; Hui, William L. ; Noel, Gerald ; Pasierb, Edward F.
Report Date : JAN 1966
Pagination or Media Count : 65
Abstract : During this contract thin-film GaAs solar cells using semitransparent Pt layers as the barrier contact have been made and investigated to improve their photovoltaic characteristics. Studies of the GaAs film, grown by the close-spaced oxide transport process, and the barrier contact structure, consisting of the Pt film, gridding and antireflection coating, led to the fabrication of cells with the following maximum efficiencies: 5.1% for 0.2 cc, 4.5% for 2.0 cc and 3% for 4.0 cc. It was shown that degradation of these cells in room ambient is due to the post-evaporation etching used during the fabrication process. Stable cells were made with efficiencies of 2.8% for areas of 2.0 cc. Tests were made to evaluate the effects of temperature, vacuum, moisture, ultraviolet light, and proton radiation on the Pt-GaAs structure. (Author)
Descriptors : (*SOLAR CELLS, FILMS), COSTS, WEIGHT, MANUFACTURING, ABSORPTION, GALLIUM COMPOUNDS, ARSENIC COMPOUNDS, OXIDES, SINGLE CRYSTALS, CRYSTAL GROWTH, THICKNESS, DOPING, GRAIN BOUNDARIES, PLATINUM, SILICON COATINGS, ETCHING, ANNEALING, DEGRADATION, HUMIDITY, TEMPERATURE, STABILITY.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE