Accession Number : AD0478538

Title :   GAAS LASER DIODES.

Descriptive Note : Final rept. 1 Jul 64-30 Jun 65,

Corporate Author : KORAD CORP SANTA MONICA CA

Personal Author(s) : Sehr, R. A. ; Rundle, W. J.

Report Date : JAN 1966

Pagination or Media Count : 30

Abstract : Refinements in the experimental technique for growing p-n junctions from liquid solution resulted in highly uniform and dislocation-free n-layers on p-substrates. High pressure diffused laser diodes were fabricated with thresholds between 50 and 70 amperes at 300 degrees K, and typical power outputs of two watts with 50 nsec pulses and a repetition rate of 1000 pps. Some lasers, mounted on special headers containing a pulse transformer, were operated at 8000 pps with 100 nsec pulses producing a beam of 1.5 watt optical peak power within a beam angle of 12 degress. (Author)

Descriptors :   *ARSENIC ALLOYS), *SEMICONDUCTOR DIODES), (*GALLIUM ALLOYS, (*LASERS, CRYSTAL GROWTH, PRESSURE, DIFFUSION, SOLUTIONS(MIXTURES), DOPING, ELECTRICAL PROPERTIES, ELECTRICAL RESISTANCE, HEATING, ELECTROMAGNETIC PULSES.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE