Accession Number : AD0478856
Title : SOLID-STATE OPTICAL MASER RESEARCH.
Descriptive Note : Quarterly rept. no. 3, 15 Aug-14 Nov 65,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Dousmanis, George C. ; Kiss, Zoltan J.
Report Date : FEB 1966
Pagination or Media Count : 16
Abstract : Large changes of laser wavelength are obtained in GaAs with changes in cavity Q (Increment of lambda/lambda equals + or - 0.005 for increment Q/Q equals + or - 0.8). These changes can be used for frequency control, possibly frequency modulation. The wavelength changes, for given increment Q/Q, are larger at room temperature than at lower temperatures. The wavelength shifts are theoretically related to changes in Q (or threshold current) on the basis of the band-filling model using the exponential tail states that explain the threshold rise with temperature. Fair agreement with the data is obtained at 300 K as well as at lower temperatures. The wavelength dependence on Q is based on the continuous nature of the states involved in stimulated emission in semiconductor lasers. This effect, in conjunction with changes in the shape of the threshold vs. temperature curve, leads to an involved relation between threshold and losses. Loss and gain constants, determined by use of the simple linear formula, may be somewhat inaccurate. The wavelength change with Q is also studied in dual laser structures where a groove parallel to the reflector surfaces separates the laser into two subsections. (Author)
Descriptors : *PERFORMANCE(ENGINEERING)), (*LASERS, MASERS, GALLIUM COMPOUNDS, ARSENIC, OPTICAL PUMPING, IONS, IMPURITIES, YTTRIUM COMPOUNDS, ALUMINUM, GARNET, LANTHANUM COMPOUNDS, ALUMINATES, INJECTION, SOLID STATE PHYSICS, DIODES, SEMICONDUCTORS, STRUCTURES, FREQUENCY.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE