Accession Number : AD0479258

Title :   SOLID-STATE IMAGE INTENSIFIER PANEL.

Descriptive Note : Interim technical progress rept. no. 1, 1 Jul-31 Dec 65,

Corporate Author : SIGMATRON INC SANTA BARBARA CA

Personal Author(s) : Heinz, David M. ; Hebert, Henry J. ; Sharp, Winston N.

Report Date : 06 JAN 1966

Pagination or Media Count : 112

Abstract : A solid-state image intensifier panel which is sensitive to radiation out to 1.7 microns is being developed. The detector is to be a heterojunction photodiode, the amplifier is to utilize thin-film transistors and the display is to be an electroluminescent panel. All of the components are thin-film devices which are being prepared by vacuum deposition. After considering the merits of a heterojunction photodetector, the most suitable materials are selected for a device sensitive to night-sky radiation out to 1.7 microns. The best heterojunction is composed of cadmium selenide on indium arsenide. Thin-film transistors have been produced which exhibit mutual transconductances 9f 900 micromhos, dynamic drain resistances of 6.25 kilohms, voltage amplification factors of 5.6 and input resistances greater than two megohms. A functioning experimental thin-film electroluminescent display panel has been produced which has resolutions of 55.5, 83.3 and 166.7 lines/inch. (Author)

Descriptors :   (*IMAGE INTENSIFIERS(ELECTRONICS), ARMY RESEARCH), PHOTOELECTRIC CELLS(SEMICONDUCTOR), ELECTROLUMINESCENCE, NIGHT SKY, CADMIUM ALLOYS, SELENIUM ALLOYS, ARSENIC ALLOYS, CRYSTAL GROWTH, SINGLE CRYSTALS, SEMICONDUCTOR DEVICES, SEMICONDUCTORS, SEMICONDUCTING FILMS.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE