Accession Number : AD0479326
Title : LOW-NOISE L-BAND (WIDEBAND) TRANSISTOR AMPLIFIER.
Descriptive Note : Quarterly technical rept. no. 6, 1 Sep-30 Nov 65,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Personal Author(s) : Read, Leslie R.
Report Date : JAN 1966
Pagination or Media Count : 38
Abstract : This report covers device characterization, directional coupler design, and amplifier matching network design for an octave bandwidth 1-2 GHz transistor amplifier. Y parameters and noise figure data for the L-148 germanium planar transistor are presented. Several coupler types are examined; one, the tandem coupler, should be significantly easier to build in thin-film circuits. The amplifier described should have a flat gain across the 1-2 GHz band. (Author)
Descriptors : *MICROWAVE AMPLIFIERS), (*TRANSISTOR AMPLIFIERS, BROADBAND, IMPEDANCE MATCHING, L BAND, NOISE(RADIO), TRANSISTORS, GERMANIUM, SEMICONDUCTING FILMS, GAIN, ELECTRICAL IMPEDANCE, WAVEGUIDE COUPLERS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE