Accession Number : AD0479326

Title :   LOW-NOISE L-BAND (WIDEBAND) TRANSISTOR AMPLIFIER.

Descriptive Note : Quarterly technical rept. no. 6, 1 Sep-30 Nov 65,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Read, Leslie R.

Report Date : JAN 1966

Pagination or Media Count : 38

Abstract : This report covers device characterization, directional coupler design, and amplifier matching network design for an octave bandwidth 1-2 GHz transistor amplifier. Y parameters and noise figure data for the L-148 germanium planar transistor are presented. Several coupler types are examined; one, the tandem coupler, should be significantly easier to build in thin-film circuits. The amplifier described should have a flat gain across the 1-2 GHz band. (Author)

Descriptors :   *MICROWAVE AMPLIFIERS), (*TRANSISTOR AMPLIFIERS, BROADBAND, IMPEDANCE MATCHING, L BAND, NOISE(RADIO), TRANSISTORS, GERMANIUM, SEMICONDUCTING FILMS, GAIN, ELECTRICAL IMPEDANCE, WAVEGUIDE COUPLERS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE