Accession Number : AD0479820
Title : ADVANCED THIN-FILM SOLAR CELLS.
Descriptive Note : Quarterly technical rept. no. 1, 16 Nov 65-28 Feb 66,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Perkins, David M. ; Hui, William L. ; Noel, Gerald ; Pasierb, Edward F.
Report Date : MAR 1966
Pagination or Media Count : 28
Abstract : During the first period under this contract, Pt-GaAs cells were made and investigated to improve their photovoltaic properties. Alternative film growth techniques and barriers were also studied to obtain an improved thin-film GaAs cell structure. Studies of Pt-GaAs cell stability have shown that Voc is reduced on exposure to hydrogen. A new vertical furnace was constructed for GaAs oxide transport which allowed significant improvement in film uniformity and easier growth of large-area films. Studies of the Mo substrate coating showed 100 A of Ge on 600 A of Sn to be the optimum coating. Other barriers investigated included Cu-GaAs contacts, diffused p-n junctions, and metal contacts to Cu-compensated GaAs films. One diffused junction cell had an efficiency of 4.9% on a net area basis. A new configuration was developed for 2-sq cm Pt-GaAs cells which allows for better array capabilities. (Author)
Descriptors : *SEMICONDUCTING FILMS), (*SOLAR CELLS, MANUFACTURING, GALLIUM ALLOYS, ARSENIC ALLOYS, PLATINUM, OXIDES, TRANSPORT PROPERTIES, MOLYBDENUM, METAL FILMS, COPPER, HYDROGEN, GERMANIUM ALLOYS, TIN ALLOYS, ZINC, CRYSTAL GROWTH.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE