Accession Number : AD0479894

Title :   RELIABILITY TESTING AND PREDICTION TECHNIQUES FOR HIGH-POWER SILICON TRANSISTORS.

Descriptive Note : Interim technical rept. no. 1, 19 Apr-19 Oct 65,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Carlson, H. G. ; Hall, J. E. ; Murdock, W. V. ; Peterson, D. A. ; Tomlinson, J. R.

Report Date : FEB 1966

Pagination or Media Count : 148

Abstract : The work performed under this contract is divided into two main parts: (1) a test and data analysis program designed to produce a method for reliability screening; (2) a physics of failure program to describe the fundamental mechanisms causing device degradation. The test program is divided into two parts, preliminary and main test programs. Results of the completed preliminary test program are reported. Information from other sources sch as the Autonetics Component Quality Assurance Program (CQAP) is also discussed. This data is useful in the design of the main test program. Physics of failure activities involved surface studies, noise studies and thermal physics. In surface studies (1) sodium and HF contamination of thermal oxides was measured; (2) MOS capacitors with various oxides were characterized before and after thermal-electrical stress; (3) models for the oxide structure and instability are postulated. Low frequency noise was examined as a tool for surface characteristics and reliability prediction. The thermophysics study developed (1) infrared microradiometer measurements, (2) an analytical solution for the heat conduction equation, (3) a study of mechanisms and location of heat generation, and (4) a comparison of thermal resistance with experimental and analytical temperature data. (Author)

Descriptors :   *SILICON), (*TRANSISTORS, RELIABILITY, TEST METHODS, NOISE ANALYZERS, SURFACE PROPERTIES, SEMICONDUCTOR DIODES, PROGRAMMING LANGUAGES.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE