Accession Number : AD0480275
Title : INVESTIGATION OF GROWTH OF SINGLE CRYSTAL FILMS ON DIELECTRIC SUBSTRATES.
Descriptive Note : Technical rept. Apr 64-Aug 65,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
Personal Author(s) : Blank, J. M. ; Henry, E. C. ; Reinhartz, K. K. ; Russell, V. A.
Report Date : 25 AUG 1965
Pagination or Media Count : 70
Abstract : The purpose of this study is to establish a fundamental understanding of the necessary surface and thermal conditions for the successful condensation and growth of single crystal films of semiconductor materials on non-conducting substrates. Nucleation and growth of silicon on sapphire substrates was investigated. The silicon was deposited by reduction of silicon tetrachloride in hydrogen. The energetics and mechanisms of nucleation and film growth were established and conditions necessary for epitaxial films were defined. Cadmium sulfide films were deposited by vacuum evaporation in ultra-high vacuum on several polycrystalline and amorphous substrates. Values for absorption, diffusion, and bonding energies were derived from the activation energy for condensation, although no distinction could be made with respect to different substrates. (Author)
Descriptors : (*SINGLE CRYSTALS, FILMS), (*SEMICONDUCTORS, CRYSTAL GROWTH), (*SEMICONDUCTING FILMS, SINGLE CRYSTALS), NUCLEATION, SILICON, SAPPHIRE, CADMIUM, SULFIDES, PRESSURE, DISSOCIATION, THERMAL PROPERTIES, DIFFUSION, CONDENSATION, TABLES(DATA), EXPERIMENTAL DATA, RECRYSTALLIZATION, SURFACE PROPERTIES, SUBSTRATES, DIELECTRICS.
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE