Accession Number : AD0482050

Title :   PHOTOCONDUCTOR-SEMICONDUCTOR EMITTERS.

Descriptive Note : Quarterly rept. no. 3, 1 Jan-1 Apr 66,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CA

Personal Author(s) : Geppert, D. V. ; Dore, B. V. ; Chambers, D. R. ; Muller, R. S. ; Mueller, R. A.

Report Date : APR 1966

Pagination or Media Count : 42

Abstract : Further data have been obtained and analyzed on the Ge/GaP heterojunctions fabricated by the GeCl4 decomposition process. In particular, the effects of postdeposition heat treatment have been studied. It appears that heat treatment anneals imperfections caused by lattice mismatch, resulting in a reduced barrier between the conduction band of the Ge and that of the GaP. Further data have been obtained on the GaP/Pd surface-barrier diodes. The current-voltage characteristics of the diodes do not fit simple Schottky theory. The results of heat treatment indicate a barrier reduction similar to that observed with the Ge/GaP diodes. The effects of depositing BaO on a heated substrate were studied. A work function of 1.22 eV was obtained on Pd by keeping the substrate at about 600 C during the BaO evaporation. Very efficient photoemission from Ni/BaO was observed at elevated temperatures. Also, infrared emission extending out to as far as 2 microns. Heavily doped p micron type GaAs crystals were cleaved in an evaporant stream of BaO molecules. A minimum photothreshold of about 1.6 eV was obtained. Alternate approaches to high-quantum-efficiency photoemission in the visible and near-IR regions are suggested. (Author)

Descriptors :   *PHOTOCONDUCTIVITY), *CATHODES(ELECTRON TUBES)), (*SEMICONDUCTOR DIODES, (*PHOTOELECTRIC MATERIALS, PHOTOELECTRIC EFFECT, GERMANIUM ALLOYS, GALLIUM ALLOYS, HEAT TREATMENT, PHOSPHORUS, BARIUM COMPOUNDS, OXIDES, PALLADIUM, NICKEL, DOPING, INFRARED SPECTRA, ANNEALING, CHLORINE COMPOUNDS, PHOTONS, DECOMPOSITION, ULTRAVIOLET SPECTRA, VISIBLE SPECTRA, CRYSTAL DEFECTS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE