Accession Number : AD0482091
Title : ION IMPLANTATION JUNCTION TECHNIQUES.
Descriptive Note : Final rept. Nov 64-Jan 66,
Corporate Author : ION PHYSICS CORP BURLINGTON MA
Personal Author(s) : King, W. J. ; Burrill, J. T. ; Solomon, S. J. ; Harrison, S. ; McNally, P.
Report Date : MAY 1966
Pagination or Media Count : 104
Abstract : This report describes investigations performed over a 16-month period on fabrication of n on p silicon single-crystal cells by ion implantation techniques and thin film cells by plasma deposition techniques. Although the process is still being optimized, ion implanted cells are already competitive with diffusion produced cells, with air mass zero (AM0) efficiencies of 11% having been achieved. A high current production machine capable of producing 10,000 cells/wk has been constructed and is being applied to further cell development. The process has been applied to dendritic material with AM0 efficiencies of >9.3% having been achieved. Using an ion beam high vacuum sputtering process, cells have been fabricated with 1 mil fused SiO2 integral cover slips and AM0 efficiencies of >10%. Functional films of both n and p-type silicon have been made. A variety of techniques for junction formation (growing, implantation, alloying, diffusion) have been studied with some very low efficiency cells (0.01%) being achieved. The primary problem preventing the achievement of higher efficiency was poor adhesion of the Si film to the metallic substrate.
Descriptors : (*SOLAR CELLS, IONS), SINGLE CRYSTALS, SILICON, ION BEAMS, ION BOMBARDMENT, DAMAGE, RADIATION EFFECTS, HEAT TREATMENT, IMPREGNATION, SUBSTRATES, THICKNESS, SPUTTERING, ENERGY.
Subject Categories : Electrical and Electronic Equipment
Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE