Accession Number : AD0482234

Title :   SEMICONDUCTOR RESEARCH.

Descriptive Note : Semiannual rept. 1 Oct 65-31 Mar 66.

Corporate Author : PURDUE UNIV LAFAYETTE IN DEPT OF PHYSICS

Report Date : 31 MAR 1966

Pagination or Media Count : 46

Abstract : Contents: Optical Modulation by Acoustoelectric Domains in p-GaSb, Acoustic Buildup Versus Intrinsic Breakdown in p-InSb, Shubnikov-de Haas Effect in Lithium-Diffused Tellurium-Doped n-type Gallium Antimonide, Galvanomagnetic Effects in p-type AlSb, Effect of Pressure on the Electrical Properties of n-type Silicon Containing Sulfur, Ultrasonic Attenuation in Semiconductors, Optical Properties of ZnTe, Effect of Uniaxial Stress on the Internal Levels at Boron in Silicon, Electron Paramagnetic Resonance in Silicon, Low Temperature Specific Heat of Hydrogen Reduced TiO2 (Rutile), Phonon-donor Scattering in Ge Below 4.2 K, and The Polaron in a Magnetic Field.

Descriptors :   (*SEMICONDUCTORS, ARMY RESEARCH), LIGHT TRANSMISSION, DOPING, ATTENUATION, ULTRASONIC PROPERTIES, OPTICAL PROPERTIES, STRESSES, PARAMAGNETIC RESONANCE, ELECTRON PARAMAGNETIC RESONANCE, PHOTOCONDUCTIVITY, SPECIFIC HEAT, PHONONS, MAGNETIC FIELDS, PULSE MODULATION, GALLIUM ALLOYS, ANTIMONY ALLOYS, INDIUM ALLOYS, LITHIUM, TELLURIUM, SILICON, ALUMINUM ALLOYS, SULFUR, BORON, TELLURIUM ALLOYS, ZINC ALLOYS, LOW TEMPERATURE.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE