Accession Number : AD0482993
Title : DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS.
Descriptive Note : Interim development rept. no. 3, 1 Jan-31 Mar 66.
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
Report Date : 31 MAR 1966
Pagination or Media Count : 37
Abstract : Operating curves for the boron doped, phosphorus doped and undoped silane systems have been established. Substrates housing opposite conductivity (P and N) regions have been fabricated during this quarter and complementary fabrication has begun. The complementary symmetry amplifier has been transformed to a monolithic layout and masks have been ordered. (Author)
Descriptors : *TRANSISTORS), (*INTEGRATED CIRCUITS, MANUFACTURING, TRANSISTORS, DOPING, BORON, PHOSPHORUS, SILANES, OXIDES, EPITAXIAL GROWTH, DEPOSITION, SILICON COMPOUNDS, ETCHING, DIFFUSION, MASKING, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE