Accession Number : AD0483028
Title : GUNN EFFECT DEVICES.
Descriptive Note : Quarterly technical rept. no. 1, 15 Nov 65-14 Feb 66,
Corporate Author : HEWLETT-PACKARD LABS PALO ALTO CA
Personal Author(s) : Engelmann, R. W. H.
Report Date : MAR 1966
Pagination or Media Count : 58
Abstract : The circuit behavior of a semiconductor bulk device operating in the region of field-controlled negative conductivity is analyzed theoretically and experimentally. It is concluded that the external rf impedance to the device has a strong influence on the field-domain performance leading to three different operation modes: (1) amplification, (2) domain-movement oscillations with limited external tuning, (3) negative-conductance oscillations with wide range tuning. The thermal performance of CW devices is analyzed for design purposes. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MICROWAVE OSCILLATORS), (*MICROWAVE OSCILLATORS, ELECTRICAL CONDUCTIVITY), RADIOFREQUENCY, L BAND, S BAND, C BAND, X BAND, K BAND, V BAND, ELECTRICAL IMPEDANCE, PERFORMANCE(ENGINEERING), OPERATION, ELECTRICAL PROPERTIES, CRYSTAL DETECTORS, SPECTRUM ANALYZERS, OSCILLATION, PIEZOELECTRIC CRYSTALS, TUNING DEVICES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE