Accession Number : AD0483734
Title : BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS.
Descriptive Note : Quarterly rept. no. 3, 1 Jan-31 Mar 66,
Corporate Author : MSI ELECTRONICS INC RICHMOND HILL NY
Personal Author(s) : Scaringella, D. ; Denker, S.
Report Date : JUN 1966
Pagination or Media Count : 11
Abstract : Gold with N type impurity alloyed into high resistivity N type silicon produced junctions which are best understood in terms of the Schottky Barrier model. As video detectors of square wave modulated microwave energy at 9.3 GHz, .001 in. diameter junction of N+ on N showed a TSS of -43 DBM with forward bias. With reverse bias, the same junction showed reversal in sign of the detected output with lower sensitivity. Epitaxial regrowth N+ on N junctions also showed the same reversal. The regrowth devices were generally less sensitive than the alloyed metal on semiconductor devices. (Author)
Descriptors : (*SEMICONDUCTOR DIODES, DETECTORS), X BAND, SENSITIVITY, GOLD, SILICON, EPITAXIAL GROWTH, VIDEO AMPLIFIERS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE