Accession Number : AD0483847

Title :   STUDY OF CONTACT FAILURES IN SEMICONDUCTOR DEVICES.

Descriptive Note : Final rept. 21 Dec 64-21 Dec 65,

Corporate Author : PHILCO CORP LANSDALE PA

Personal Author(s) : Schnable, George L. ; Keen, Ralph S.

Report Date : APR 1966

Pagination or Media Count : 184

Abstract : A study and investigation was made of the effects of intermetallic diffusion, compound formation, and solid state reactions occuring at ohmic contact interfaces on reliability of semiconductor devices and materials. The intent of this study was to make available information on activation energies and reaction kinetics of the principal failure mechanisms occurring in semiconductor or ohmic contacts for application to long term reliability prediction and testing techniques. Material systems studied included metal interconnections and terminations common to semiconductor devices, thin-film components and integrated silicon circuits. (Author)

Descriptors :   *SEMICONDUCTING FILMS), (*INTEGRATED CIRCUITS, (*INTERMETALLIC COMPOUNDS, DIFFUSION BONDING), FAILURE(ELECTRONICS), SILICON COMPOUNDS, THERMAL CONDUCTIVITY, REACTION KINETICS, DEGRADATION, ELECTRICAL RESISTANCE, REACTION KINETICS, ELECTRON DIFFRACTION, OXIDES, MICROELECTRONICS, ALUMINUM ALLOYS, GOLD ALLOYS, SILVER ALLOYS, NICKEL ALLOYS, COPPER ALLOYS.

Subject Categories : Electrical and Electronic Equipment
      Metallurgy and Metallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE