Accession Number : AD0483968
Title : ION IMPLANTATION JUNCTION TECHNIQUES.
Descriptive Note : Quarterly technical progress rept. no. 1, 26 Jan-30 Apr 66,
Corporate Author : ION PHYSICS CORP BURLINGTON MA
Personal Author(s) : King, W. J. ; Burrill, J. T. ; Smith, D. ; Surette, J. L. ; Harrison, S.
Report Date : 30 APR 1966
Pagination or Media Count : 36
Abstract : The program is directed at optimization of the ion implantation method of fabricating solar cells from dendritic silicon for systems applications. During this quarter efforts were primarily concerned with demonstrating that useful cell configurations can be made which include the dendrites as active material. Cells of this type were made with efficiencies as high as 9.4% AMO. Preliminary investigations were conducted on reflecting back cells and an optimized antireflective coating for coverslipped cells has been developed. A small investigation was conducted on applying integral coverslips by reactive sputtering and some evaluation cells were made with the previously developed high vacuum sputtered coverslips.
Descriptors : (*SOLAR CELLS, FEASIBILITY STUDIES), PROCESSING, SILICON, FILMS, SPUTTERING, SINGLE CRYSTALS, TUNGSTEN, COATINGS, REFLECTION, REDUCTION, TITANIUM COMPOUNDS, DIOXIDES, SILICON ALLOYS, CARBIDES, DAMAGE, RADIATION EFFECTS.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE