Accession Number : AD0484616

Title :   SINGLE CRYSTAL SILICON FILMS ON INSULATING SUBSTRATES.

Descriptive Note : Final rept. 1 May 65-30 Apr 66.

Corporate Author : AUTONETICS ANAHEIM CA

Report Date : 30 APR 1966

Pagination or Media Count : 42

Abstract : No correlations could be established between sapphire quality and MOS FET device quality and yield. Reasonable device yields were obtained on both good and poor quality sapphire substrates. Feasibility has been demonstrated for silicon-on-sapphire bipolar transistors. The three main types which have been successfully fabricated are: (1) conventional planar transistors (NPN) fabricated in thick silicon films (>4 microns); (2) vertical junction small area homogeneous base transistors (PNP) fabricated in thin silicon films (<1 micron); (3) vertical junction small area graded base transistors (NPN) fabricated in thin silicon films (<1 micron). Low power flip-flops using complementary P- and N-channel MOS transistors were fabricated in a memory array configuration. Some of the flip-flops were diced and mounted on TO-5 headers. Switching times in the order of 100 to 200 nanoseconds were observed.

Descriptors :   (*SEMICONDUCTORS, SILICON), (*SILICON, EPITAXIAL GROWTH), SINGLE CRYSTALS, SUBSTRATES, SAPPHIRE, ELECTRICAL PROPERTIES, PROCESSING, MEMORY DEVICES, SWITCHING CIRCUITS, ETCHING, CYCLOBUTANES, ALKANES, FLUORINE COMPOUNDS, INTEGRATED CIRCUITS, STATISTICAL ANALYSIS.

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE