Accession Number : AD0484781
Title : DEVELOPMENT OF A MICROELECTRONICS CAPABILITY AND FACILITY AT RADC.
Descriptive Note : Technical rept.,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY RELIABILITY BRANCH
Personal Author(s) : O'Connell, Edward P. ; Calabrese, Donald W. ; Walsh, Thomas W. ; Lane, Clyde H. ; Farrell, John P.
Report Date : MAY 1966
Pagination or Media Count : 140
Abstract : This report discusses the basic facilities required for conducting exploratory research in microelectronics, and specific information pertaining to silicon wafer processing, epitaxial growth, photolithography, diffusion, thin film processing, as well as material characteristics and limitations. Methods are described for obtaining precision drawings and reduction techniques that are recommended in photo mask making. Processing of photo resist materials, including solutions and methods of etching both metal and oxide masks, is presented. The results are given of bonding investigations using ultrasonic energy and various combinations of land and wire materials that have been successfully joined. Step-by-step procedures for fabricating thin film passive components are outlined. A negative resistance behavior that was observed in valve metal oxides and the circuit that utilized this phenomenon to produce voltage tunable oscillators from 2KHz to 2MHz is shown. The performance characteristics of two thin film amplifiers that were designed to operate at 455 K Hz and 30M Hz, respectively, are given.
Descriptors : (*INTEGRATED CIRCUITS, PROCESSING), CHEMICAL MILLING, PHOTOGRAPHIC FILM, ELECTRIC TERMINALS, METAL FILMS, SUBSTRATES, CAPACITORS, DEPOSITION, OXIDES, RESISTORS, SEMICONDUCTOR DEVICES, CONTAMINATION, IMPURITIES, DIFFUSION, EPITAXIAL GROWTH, SILICON, MICROPHOTOGRAPHY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE