Accession Number : AD0486669

Title :   MICROWAVE TRANSISTORS.

Descriptive Note : Quarterly rept. no. 3, 1 Dec 65-28 Feb 66,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Johnson ,George ; Boone ,Dave ; Lange,Julius

Report Date : JUL 1966

Pagination or Media Count : 128

Abstract : Crystal growth technique for preparing starting crystals used in fabricating NPN planar Ge transistors is described. Experimental procedures used in growing p-type epitaxial layers are given. Base formation techniques are described, and emitter and emitter-contact problems are discussed. Epitazxial base, planar NPN Ge transistors have been fabricated using these technologies. A process is described which can be used to fabricate epitaxial-base or double-diffused transistors, and a resistance test pattern has been designed to allow measurement of the components of base resistance. A study of power dissipation with emitter area has been made. Results of a microwave measurements study program are summarized. A tuning range of 500 MHZ has been obtained at S-band using a parallel type varactor tuned teflon-fiberglass prototype circuit. Design curves for the series tuned varactor controlled oscillator have been developed which show the optimum tank component specifications for this type of oscillator. Ceramic parallel tuned oscillators have been fabricated and preliminary evaluation is reported. Characterization of the GaAs and Si mixer diodes is in progress. Measurement of the RF impedance has indicated that the RF transformers will have to be redesigned. Filter designs suitable for the mixer are being considered. Characterization of L-148 transistors at S-band has been started. These transistors will be used in the prototype amplifier design at 1.7 to 2.4 GHz. Jigs and test procedures suitable for measuring S-parameters at 2.5 GHz are discussed. (Author)

Descriptors :   (*TRANSISTORS, PROCESSING), EPITAXIAL GROWTH, MICROWAVES, ELECTRICAL RESISTANCE, GERMANIUM, S BAND, VARACTOR DIODES, TUNED CIRCUITS, GALLIUM ALLOYS, ARSENIC ALLOYS, SILICON, CRYSTAL MIXERS, OSCILLATORS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE