Accession Number : AD0487633

Title :   PROTON AND ELECTRON IRRADIATION OF N/P SILICON SOLAR CELLS,

Corporate Author : LOCKHEED MISSILES AND SPACE CO INC PALO ALTO CA PALO ALTO RESEARCH LAB

Personal Author(s) : Reynard, D. L.

Report Date : 12 APR 1965

Pagination or Media Count : 64

Abstract : The radiation degradation data for ten ohm-cm N/P silicon solar cells which existed at the initiation of this test program was in need of further substantiation and improvement. A test program was thus commenced which would provide complete and reliable performance data for the support of the power system design and the assurance of the system's reliability. Solar cells were irradiated with electrons with four energies and protons with three energies. Comparable cells produced by four different manufacturers were included. Solar cell/cover/adhesive composite samples were electron-irradiated. I-V characteristics were obtained at intermediate, as well as final, total flux levels. The desired test data were obtained with a high degree of accuracy. The cells of the four manufacturers were substantially equal in radiation tolerance. Little difference was noted between the performance of 1 and 10 ohm-cm cells. It was concluded that only power measurements are valid as criteria for relative power system degradation. (Author)

Descriptors :   (*SOLAR CELLS, SILICON), RADIATION EFFECTS, PROTONS, ELECTRONS, DEGRADATION, DAMAGE, RADIATION EFFECTS, ELECTRICAL PROPERTIES, MEASUREMENT, CALIBRATION.

Subject Categories : Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE