Accession Number : AD0487758

Title :   DEVELOPMENT OF A 1 WATT, 2GHZ SILICON UHF POWER TRANSISTOR.

Descriptive Note : Quarterly rept. no. 3, 1 Feb-30 Apr 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : McGeough, P. L. ; Lee, H. C.

Report Date : AUG 1966

Pagination or Media Count : 17

Abstract : Efforts were continued on a program to design and develop a 1-watt, 2-gigahertz silicon transistor having a minimum of 50 percent efficiency and 10 dB power gain. Major effort was concentrated on continued epitaxial layer and diffusion profile studies. Shallow diffusion techniques have been developed which result in a reproducible diffusion process. Studies of the effect of p diffusion depth on UHF performance are presently being performed. The epitaxial layer thickness and resistivity have been optimized for minimal gain-bandwidth product falloff with collector current and acceptable collector-base breakdown voltages have been obtained. UHF evaluation of various coaxial packages has revealed that the performance of the Type A coaxial package is superior to that of other packages. This superior performance was manifested by improved thermal characteristics. Experimental devices mounted in this package have achieved 1 watt of output power with 3.4dB power gain and 26 percent collector efficiency at 2 gigahertz.

Descriptors :   (*TRANSISTORS, SILICON), ULTRAHIGH FREQUENCY, EPITAXIAL GROWTH, DIFFUSION, MANUFACTURING, THICKNESS, ELECTRICAL RESISTANCE, PACKAGING, THERMAL PROPERTIES, GAIN, RADIOFREQUENCY POWER.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE