Accession Number : AD0488342

Title :   APPLICATION OF FIELD-EFFECT TRANSISTORS TO R-F POWER GENERATION.

Descriptive Note : Master's thesis,

Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s) : Sim, Pak Won

Report Date : MAY 1966

Pagination or Media Count : 60

Abstract : Field effect transistors have several characteristics which are distinct from those of standard bipolar transistors. In this paper a study is made to see if any of these characteristics can be advantageously utilized to generate r-f power. A conventional class-C FET r-f power amplifier is analyzed following a semigraphical method similar to that used for vacuum tubes. Some advantageous characteristics of the device are discussed along with some drawbacks. The applicability of FETs to pulse-excited r-f power generation circuits is investigated and the device limitations in this field of application are discussed. Finally, the combined use of an FET and a conventional bipolar transistor, to overcome the respective limitations, in an efficient r-f power generation circuit is studied. A practical working model of this hybrid circuit was built to illustrate its advantages. (Author)

Descriptors :   (*TRANSISTORS, ELECTRIC FIELDS), POWER AMPLIFIERS, RADIOFREQUENCY, TUNED CIRCUITS, ELECTRICAL IMPEDANCE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE