Accession Number : AD0488977
Title : ION IMPLANTATION JUNCTION TECHNIQUES.
Descriptive Note : Quarterly technical progress rept. no. 2, 1 May-31 Jul 66,
Corporate Author : ION PHYSICS CORP BURLINGTON MA
Personal Author(s) : King, W. J. ; Burrill, J. T. ; Smith, D. ; Harrison, S. ; Soloman, S. J.
Report Date : 31 JUL 1966
Pagination or Media Count : 28
Abstract : The investigations being conducted under this program are based on prior investigations. The program is directed at optimization of the ion implantation method of fabricating solar cells from dendritic silicon for systems applications. During this quarter efforts have been primarily concerned with demonstrating that useful cell configurations can be made which include the dendrites as active material. Cells of this type have been made with efficiencies as high as 9.4% AM0. Preliminary investigations have been conducted on reflecting back cells and an optimized antireflective coating for coverslipped cells has been developed. A small investigation has been conducted on applying integral coverslips by reactive sputtering and some evaluation cells were made with the previously developed high vacuum sputtered coverslips.
Descriptors : (*SOLAR CELLS, DOPING), SILICON, GRAIN STRUCTURES(METALLURGY), PROCESSING, QUARTZ, COATINGS, FILMS, ELECTRIC TERMINALS, TITANIUM ALLOYS, SILVER ALLOYS, IONS.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE