Accession Number : AD0489150
Title : ION IMPLANTATION DOPING TECHNIQUES.
Descriptive Note : Interim technical rept. no. 1, 1 May-31 Jul 66,
Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF
Personal Author(s) : Brewer,Robert G. ; Marsh,Ogden J. ; Wilson,R. G.
Report Date : SEP 1966
Pagination or Media Count : 52
Abstract : This report summarizes the effort during the first quarter, which was directed toward obtaining an understanding of the processes in ion implantation doping of semiconductor materials. The principal results obtained were (a) the development, based on experience up to the start of the contract, of improved ion sources, particularly for phosphorus, arsenic, aluminum, and indium, and mass separation techniques where necessary; (b) the perfection of advanced junction evaluation techniques, including methods for profile determination near the surface and deeper into the crystal; (c) the development of methods for evaluating current conduction properties of the implanted region by Hall measurement; (d) the conduct of implantations and evaluations under varying implant and anneal conditions to obtain data leading toward a complete characterization of specific dopant-silicon combinations. Data on source performance and from evaluation of implanted junctions are given. (Author)
Descriptors : (*SEMICONDUCTING FILMS, *ION BEAMS), ANNEALING, DOPING, PHOSPHORUS, ARSENIC, ALUMINUM, INDIUM, HALL EFFECT, SILICON, PUMPING(ELECTRONICS), IONIZATION
Subject Categories : Metallurgy and Metallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE