Accession Number : AD0489530

Title :   RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Descriptive Note : Quarterly progress rept. no. 1, 1 Jun-1 Sep 66.

Corporate Author : GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT

Report Date : 01 JUN 1966

Pagination or Media Count : 50

Abstract : This report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. Precipitation in silicon, poisoning phenomena, gold diffusion irregularities, spiking, and resistivity changes, all of which are related to the problem of developing high-voltage, high-speed switches, are discussed, as well as current construction due to the design of a p-n-p-n structure.

Descriptors :   *THERMAL STABILITY), (*INVERTERS, TRANSISTORS), (*TRANSISTORS, CRYSTAL DEFECTS, SILICON, CHEMICAL PRECIPITATION, GOLD, DIFFUSION, ELECTRICAL RESISTANCE, IMPURITIES, PHOSPHORUS, ELECTRICAL PROPERTIES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE