Accession Number : AD0600060

Title :   HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

Descriptive Note : Quarterly rept. no. 3, 29 Nov 63-28 Feb 64,

Corporate Author : MOTOROLA INC PHOENIX ARIZ

Personal Author(s) : Burlingame,B. G.

Report Date : 28 FEB 1964

Pagination or Media Count : 39

Abstract : A pilot production facility capable of producing high speed semiconductor switches in accordance with Signal Corps technical specifications is considered. The major problem areas to be overcome in order to achieve the purpose of this program are forward breakover voltage and current on the two-terminal device, forward blocking current on the threeterminal device, and switching speeds, current carrying capabilities, forward anode voltage, and rate of forward voltage rise on both devices. Work performed during the period 29 November 1963 through 28 February 1964 is covered. Data on the second group of engineering samples is contained in this report. Results from engineering studies and progress made on die, package and test equipment design are reported. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, PRODUCTION), (*ELECTRONIC SWITCHES, SEMICONDUCTORS), ELECTRICAL PROPERTIES, MILITARY REQUIREMENTS, MANUFACTURING

Distribution Statement : APPROVED FOR PUBLIC RELEASE