Accession Number : AD0600080
Title : SEMICONDUCTOR CATALYSIS: SIMULTANEOUS MEASUREMENT OF KINETICS AND SURFACE ELECTRICAL PROPERTIES.
Descriptive Note : Technical rept. no. 1,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE
Personal Author(s) : Merrill,Robert P. ; Baddour,Raymond F.
Report Date : 15 MAY 1964
Pagination or Media Count : 163
Abstract : Theoretically and experimentally the relationship between the surface electrical properties of a semiconductor catalyst and its catalytic activity was explored. A program was proposed for the measurement of surface conductivity and recombination velocity on germanium simultaneously with the measurement of reaction kinetics of the decomposition of ethanol. The equipment to carry out these measurements included a system to operate a unique radio-frequency mass spectrometer, which was used to analyze the decomposition products. Key experiments to demonstrate the facility of the design, including measurements of ethanol decomposition on vacuum cleaved germanium and surface electrical properties of etched germanium wafers were made. In the kinetic experiments it was found that the catalysts produced by vacuum cleavage are much more active than catalysts produced by crushing in air and subsequent reduction in hydrogen, though the activation energies are similar. Treating the vacuum crushed catalyst with hydrogen lowers both the activation energy and the rate. Evidence is presented for the possible formation of a germanium hydride on the clean surfaces and the formation of an oxy-hydrogen complex on aircrushed catalysts.
Descriptors : (*CATALYSIS, SEMICONDUCTORS), (*SEMICONDUCTORS, CATALYSIS), ETHANOLS, GERMANIUM, SURFACE PROPERTIES, ELECTRICAL PROPERTIES, RECOMBINATION REACTIONS, DECOMPOSITION, REACTION KINETICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE