Accession Number : AD0600178
Title : PHOTOCONDUCTIVITY OF GALLIUM ANTIMONIDE.
Descriptive Note : Technical rept. (thesis),
Corporate Author : PURDUE UNIV LAFAYETTE IND
Personal Author(s) : Habegger,M. A.
Report Date : 01 JUN 1964
Pagination or Media Count : 156
Abstract : The photoconductivity of GaSb was studied to obtain information about impurity or defect levels and to elucidate the recombination processes of excess carriers. The spectral distribution, the steady state magnitude of the response and the transient behavior of the photoconductive signal were studied. Measurements were made in the temperature range of 5 K to 370 K. (Author)
Descriptors : (*ANTIMONY ALLOYS, PHOTOCONDUCTIVITY), (*GALLIUM ALLOYS, PHOTOCONDUCTIVITY), PHOTOELECTRIC MATERIALS, SINGLE CRYSTALS, CRYSTAL DEFECTS, EXCITATION, ATOMIC ENERGY LEVELS, PHONONS, ELECTRONS
Distribution Statement : APPROVED FOR PUBLIC RELEASE