Accession Number : AD0600178

Title :   PHOTOCONDUCTIVITY OF GALLIUM ANTIMONIDE.

Descriptive Note : Technical rept. (thesis),

Corporate Author : PURDUE UNIV LAFAYETTE IND

Personal Author(s) : Habegger,M. A.

Report Date : 01 JUN 1964

Pagination or Media Count : 156

Abstract : The photoconductivity of GaSb was studied to obtain information about impurity or defect levels and to elucidate the recombination processes of excess carriers. The spectral distribution, the steady state magnitude of the response and the transient behavior of the photoconductive signal were studied. Measurements were made in the temperature range of 5 K to 370 K. (Author)

Descriptors :   (*ANTIMONY ALLOYS, PHOTOCONDUCTIVITY), (*GALLIUM ALLOYS, PHOTOCONDUCTIVITY), PHOTOELECTRIC MATERIALS, SINGLE CRYSTALS, CRYSTAL DEFECTS, EXCITATION, ATOMIC ENERGY LEVELS, PHONONS, ELECTRONS

Distribution Statement : APPROVED FOR PUBLIC RELEASE