Accession Number : AD0600321
Title : ELECTRICAL CHARACTERISTICS OF GRAIN BOUNDARIES IN COMPOUND SEMICONDUCTORS.
Descriptive Note : Final rept.,
Corporate Author : GENERAL MILLS INC MINNEAPOLIS MINN
Personal Author(s) : Mueller,R. K.
Report Date : 28 JUN 1963
Pagination or Media Count : 21
Abstract : The principal effort was directed toward the preparation of low-angle grain boundaries in indium antimonide (InSb) and the study of their electrical and galvanomagnetic properties with the ultimate objective of relating these properties to the structure of the boundary. (Author)
Descriptors : (*SEMICONDUCTORS, GRAIN BOUNDARIES), (*GRAIN BOUNDARIES, SEMICONDUCTORS), (*GRAIN BOUNDARIES, ELECTRICAL PROPERTIES), (*CRYSTAL DEFECTS, GRAIN BOUNDARIES), SINGLE CRYSTALS, CRYSTAL GROWTH, PURIFICATION, INDIUM ALLOYS, ANTIMONY ALLOYS
Distribution Statement : APPROVED FOR PUBLIC RELEASE