Accession Number : AD0600974

Title :   CARRIER LIFETIME IN INSB AT HIGH CARRIER DENSITIES.

Corporate Author : BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH

Personal Author(s) : Cunningham,R. W.

Report Date : OCT 1963

Pagination or Media Count : 15

Abstract : It has recently become possible to inject electrons and holes into InSb at high densities. Lifetimes much larger than the small density values have been observed. In order to gain information about the dominant recombination mechanism at low temperatures the photon radiative lifetime was computed as a function of temperature. (Author)

Descriptors :   (*SEMICONDUCTORS, INDIUM ALLOYS), (*INDIUM ALLOYS, ANTIMONY ALLOYS), PHOTOCONDUCTIVITY, IMPURITIES, INJECTION, CRYSTAL DEFECTS, PHOTONS, LOW TEMPERATURE

Distribution Statement : APPROVED FOR PUBLIC RELEASE