Accession Number : AD0600974
Title : CARRIER LIFETIME IN INSB AT HIGH CARRIER DENSITIES.
Corporate Author : BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH
Personal Author(s) : Cunningham,R. W.
Report Date : OCT 1963
Pagination or Media Count : 15
Abstract : It has recently become possible to inject electrons and holes into InSb at high densities. Lifetimes much larger than the small density values have been observed. In order to gain information about the dominant recombination mechanism at low temperatures the photon radiative lifetime was computed as a function of temperature. (Author)
Descriptors : (*SEMICONDUCTORS, INDIUM ALLOYS), (*INDIUM ALLOYS, ANTIMONY ALLOYS), PHOTOCONDUCTIVITY, IMPURITIES, INJECTION, CRYSTAL DEFECTS, PHOTONS, LOW TEMPERATURE
Distribution Statement : APPROVED FOR PUBLIC RELEASE