Accession Number : AD0601008

Title :   500 C SILICON CARBIDE RECTIFIER PROGRAM.

Descriptive Note : Interim technical progress rept. no. 10, 1 Jan-31 Mar 64,

Corporate Author : WESTINGHOUSE RESEARCH LABS PITTSBURGH PA

Personal Author(s) : Chang,H. C. ; Thornburg,D. R. ; Roach,C. J. ; Ostroski,J. ; Barrett,D. L.

Report Date : APR 1964

Pagination or Media Count : 23

Abstract : The various stations of a pilot line are described. As much of the processing as possible is done in controlled atmosphere dry boxes. The design of the new sublimation furnace was completed and it is being fabricated. Further development work is being carried out on the crystal growth phase of the program. With the addition of graphite felt to the furnace as an insulating material, pump down time was materially re duced. Progress is being made on the solid doping technique for aluminum and p and n type junctions are being grown. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, RECTIFIERS), (*CRYSTAL RECTIFIERS, MANUFACTURING), (*CRYSTAL GROWTH, SILICON COMPOUNDS), (*SILICON COMPOUNDS, CARBIDES), CONTROLLED ATMOSPHERES, VACUUM FURNACES, GRAPHITE, SUBLIMATION, IMPURITIES, ALUMINUM

Distribution Statement : APPROVED FOR PUBLIC RELEASE