Accession Number : AD0601135
Title : INVESTIGATION OF HOT ELECTRON EMITTER.
Descriptive Note : Scientific rept. no. 7, 1 Jan-31 Mar 64
Corporate Author : HP ASSOCIATES PALO ALTO CALIF
Personal Author(s) : Soshea,R. W. ; Lucas,R. C. ; Reid,D. A. ; Dowler,V. M. ; Harmon,R. C.
Report Date : 31 MAY 1964
Pagination or Media Count : 20
Abstract : The evaporation characteristics for CdSe are presented, and the film doping density is found to depend greatly on source and substrate temperatures. Pt was found to be more compatible with the evaporation conditions than Au. Triode structures of the class GaAs-Pt-CdSe and Si-Pt-CdSe were fabricated, and the results are presented. The CdSe may be an adequately good emitter at high current densities to enable the measurement of the triode range to be made in Pt. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, TRIODES), (*CADMIUM COMPOUNDS, SELENIDES), (*VAPOR PLATING, CADMIUM COMPOUNDS), ELECTRODES, FILMS, SEMICONDUCTORS, PLATINUM, ELECTRONS, EMISSIVITY, EVAPORATION
Distribution Statement : APPROVED FOR PUBLIC RELEASE