Accession Number : AD0602724

Title :   INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.

Descriptive Note : Quarterly progress rept. no. 6, 16 Feb-15 May 64,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : MADDIX,H. S. ; Gregory,J.

Report Date : 24 JUN 1960

Pagination or Media Count : 39

Abstract : Equations expressing tube life as a function of initial square root clean-up rate were derived. Validity of these equations was demonstrated by application to actual life test data. The use of thin metallic films to control gas clean-up in quartz tubes was investigated. Preliminary results with argon at room temperature indicate that an order of magnitude reduction in square root clean-up rate can be achieved by using a thin tungsten film as a diffusion barrier. Tungsten film erosion by the discharge was inhibited by the use of a second thin film of either tungsten oxide or silicon dioxide. Data obtained for the sorption of hydrogen in OFHC copper indicate that hydrogen diffuses into the metal bulk at a rapid rate compared with the observed rates for inert gases in quartz. Hydrogen was found to have an activation energy of 5.7K cal/mole for diffusion in OFHC copper. (Author)

Descriptors :   (*MICROWAVE EQUIPMENT, DISCHARGE TUBES), (*DISCHARGE TUBES, MICROWAVE FREQUENCY), ELECTRON TUBES, QUARTZ, GASES, ARGON, HYDROGEN, HEAT OF ACTIVATION, DIFFUSION, ADSORPTION, DIFFUSION, FILMS, TUNGSTEN, COPPER, TUNGSTEN COMPOUNDS, OXIDES, SILICON COMPOUNDS, DIOXIDES

Distribution Statement : APPROVED FOR PUBLIC RELEASE