Accession Number : AD0602993

Title :   THE FIRST CZECHOSLOVAKIAN SEMICONDUCTIVE LASER,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date : 07 JUL 1964

Pagination or Media Count : 5

Abstract : Introduced is a laser, operating on the principle of using a gallium arsenide crystal, with transition (transformation) of the type similar to the semiconductor regulators. The laser emits stimulated radiation in near infrared zone (at about 0.85 micron). A GaAs sample was prepared in dimensions of 0.2 x 0.6 mm, submerged in gaseous nitrogen and worked with current pulses of several microns duration; the processing of the crystal and its cultivation was done with optical precision.

Descriptors :   (*LASERS, SEMICONDUCTOR DEVICES), (*CZECHOSLOVAKIA, LASERS), GALLIUM COMPOUNDS, ARSENIDES, CRYSTALS, EXCITATION, LIGHT, INFRARED RADIATION, OPTICS, AMPLIFIERS, GALLIUM ALLOYS, ARSENIC ALLOYS

Distribution Statement : APPROVED FOR PUBLIC RELEASE