Accession Number : AD0602993
Title : THE FIRST CZECHOSLOVAKIAN SEMICONDUCTIVE LASER,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Report Date : 07 JUL 1964
Pagination or Media Count : 5
Abstract : Introduced is a laser, operating on the principle of using a gallium arsenide crystal, with transition (transformation) of the type similar to the semiconductor regulators. The laser emits stimulated radiation in near infrared zone (at about 0.85 micron). A GaAs sample was prepared in dimensions of 0.2 x 0.6 mm, submerged in gaseous nitrogen and worked with current pulses of several microns duration; the processing of the crystal and its cultivation was done with optical precision.
Descriptors : (*LASERS, SEMICONDUCTOR DEVICES), (*CZECHOSLOVAKIA, LASERS), GALLIUM COMPOUNDS, ARSENIDES, CRYSTALS, EXCITATION, LIGHT, INFRARED RADIATION, OPTICS, AMPLIFIERS, GALLIUM ALLOYS, ARSENIC ALLOYS
Distribution Statement : APPROVED FOR PUBLIC RELEASE