Accession Number : AD0603262

Title :   STUDY OF SURFACE STATES IN SEMICONDUCTORS,

Corporate Author : TYCO LABS INC WALTHAM MASS

Personal Author(s) : Rupprecht ,G. ; Gilbert,J.

Report Date : JUL 1964

Pagination or Media Count : 31

Abstract : The report presents pertinent experimental procedures, results, and discussion of surface states on (111) surfaces of GaAs. For n-type 'undoped' GaAs, pulsed field effect measurements on the B face yield two levels: E1 = 0.56 eV below the conduction band with a capture cross-section of the order of approx 10 to the -12th power sq cm and E2 = 0.13 eV below the conduction band with a capture cross-section for electrons of approx. 10 to the -22 power sq cm. Level E1 appears to be a donor state, whereas E(e) is identified as an acceptor state. The A face yields a distribution of states of energies in the range of 0.2 eV and 0.6 eV below the conduction band. One level, 0.51 below the conduction band with a capture cross-section for electrons of 10 to the -14 power sq cm, agrees within experimental error with the E1 level on the B face. A correlation between surface state activity and dislocation etch pit density is discussed and further studies are outlined. (Author)

Descriptors :   (*SEMICONDUCTORS, SURFACE PROPERTIES), (*GALLIUM ALLOYS, ARSENIC ALLOYS), PHOTOCONDUCTIVITY, ELECTRON CAPTURE, ATOMIC ENERGY LEVELS, ELECTRON TRANSITIONS, CRYSTAL DEFECTS, ETCHED CRYSTALS, ELECTRIC CONNECTORS, PULSE AMPLIFIERS

Distribution Statement : APPROVED FOR PUBLIC RELEASE