Accession Number : AD0603716
Title : INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME IV. DIFFUSION.
Descriptive Note : Rept. for Feb 63-Jan 64,
Corporate Author : RESEARCH TRIANGLE INST DURHAM N C
Personal Author(s) : Smith,A. M.
Report Date : FEB 1964
Pagination or Media Count : 306
Abstract : Both the theoretical and the practical aspects of impurity diffusion in silicon are discussed. Fick's second law is solved for a number of boundary conditions; the solutions obtained are compared with the measured data and shown to be valid only under certain experimental conditions. The experimentally determined values of the diffusion coefficients of 28 impurities in silicon are listed. Concentration, both of background impurity and diffusion impurity, can influence the value of the diffusion coefficient. This influence is illustrated by data from boron and phosphorus diffusions. Some typical, practical diffusion systems are described, emphasizing the techniques of open-tube diffusion of boron and phosphorus. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, SILICON), (*SILICON, IMPURITIES), BORON, PHOSPHORUS, SOLUBILITY, DIFFUSION, THEORY, SINGLE CRYSTALS, VAPOR PLATING, SURFACES, PREPARATION, INDUSTRIAL EQUIPMENT
Distribution Statement : APPROVED FOR PUBLIC RELEASE