Accession Number : AD0603783
Title : SEMICONDUCTOR DEVICE CONCEPTS.
Descriptive Note : Scientific rept. no. 7,
Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y
Personal Author(s) : Woodbury,H. H. ; Aven,M. ; Heumann,F. K. ; Hall,R. N.
Report Date : 05 MAY 1964
Pagination or Media Count : 67
Abstract : Studies of the defect chemistry of the II-VI compounds were continued (see AD-433 975) and a comparison was made of the electrical behavior of CdTe, CdS, and ZnSe following either thermal firings or 1.5 Mev electron bombardment. The diffusion of Cu into undoped ZnS as well as Cl-doped and Al-doped ZnSe was investigated by radiotracer techniques. The results were used to correlate the electrical and optical activity of some defect centers in II-VI compounds. The halogen transport growth of GaAs(x)P(1-x) crystals continued. Laser quality material is being produced, but the ingots, while relatively homogeneous, are polycrystalline. Several ingots of GaAs and GaAs(x)P(1-x) were made using a lower furnace temperature. These ingots have large single-crystal regions and are more homogeneously doped than previous ones. Exciton and related luminescence phenomena that occur near the band edge of a semiconductor are discussed and compared with the absorption spectrum. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, PREPARATION), CADMIUM COMPOUNDS, TELLURIDES, SULFIDES, ZINC COMPOUNDS, SELENIDES, ELECTRICAL PROPERTIES, HEAT TREATMENT, ELECTRON IRRADIATION, IMPURITIES, COPPER, CHLORINE, ALUMINUM, TRACER STUDIES, CRYSTAL DEFECTS, OPTICAL PROPERTIES, SINGLE CRYSTALS, GALLIUM ALLOYS, ARSENIC ALLOYS, CRYSTAL GROWTH, LUMINESCENCE, ABSORPTION SPECTRA
Distribution Statement : APPROVED FOR PUBLIC RELEASE