Accession Number : AD0604660
Title : RESEARCH ON THE INFLUENCE OF SURFACE CONDITIONS ON DIFFUSION IN SILICON.
Descriptive Note : Final rept. for 16 Jun 61-15 Jun 64,
Corporate Author : SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
Personal Author(s) : Gereth,Reinhard K.
Report Date : JUL 1964
Pagination or Media Count : 181
Abstract : The purpose of the contract was to study the diffusion of impurities, particularly donors and acceptors, near the surface of silicon as affected by disturbances introduced at the surface before or during diffusion. This goal was achieved by carrying out three major research projects concerned with: (1) Ion bombardment and simultaneous doping of silicon in a dc glow discharge. (2) Studies of anomalous diffusion in heavily doped surface layers. (3) Observation of lattice defects such as misfit dislocations near silicon surfaces doped with phosphorus and defects related to surface damage. The results of the investigations are presented in this report.
Descriptors : (*SILICON, DIFFUSION), (*SEMICONDUCTORS, IMPURITIES), ION BOMBARDMENT, CRYSTAL DEFECTS, PHOSPHORUS, BORON, OXIDES, ALUMINUM, EQUATIONS, INTEGRALS, DEFORMATION, ELECTRON MICROSCOPY, SURFACE PROPERTIES, GLOW DISCHARGES
Distribution Statement : APPROVED FOR PUBLIC RELEASE