Accession Number : AD0607569

Title :   SOURCE CONTAMINATION EFFECTS ON THE EPITAXY OF GE FILMS ON GE.

Descriptive Note : Final rept.,

Corporate Author : NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s) : Davey,J. E.

Report Date : 28 SEP 1964

Pagination or Media Count : 28

Abstract : The effect of source contamination on the structure of Ge films deposited simultaneously onto single-crystal Ge substrates and amorphous quartz Hall substrates was investigated. Deposition from the refractory metals, from quartz crucibles, and from extensively outgassed and vacuumloaded graphite crucibles produce single-crystal films when deposited at a substrate temperature of 350 C; the electrical properties of the films deposited simultaneously onto the Hall substrates are typical of Ge films with good structural properties. Deposition from unoutgassed graphite crucibles (either resistive or radiative heating) and A12O3 in either crucible or cataphoretic form, produce films ranging from amorphous to polycrystalline when deposited on single-crystal Ge at 350 C. Evaporations from these latter materials will produce single-crystal films on Ge single crystals only for extensive vacuum outgassing and vacuum loading of the Ge charge and for substrate temperatures in excess of 500 C. (Author)

Descriptors :   (*GERMANIUM, FILMS), (*METAL FILMS, CONTAMINATION), SINGLE CRYSTALS, EPITAXIAL GROWTH, IMPURITIES, TUNGSTEN, GRAPHITE, QUARTZ, CARBON, ALUMINUM COMPOUNDS, OXIDES, VAPOR PLATING, EVAPORATION, CRYSTAL SUBSTRUCTURE, X RAY DIFFRACTION, ELECTRON DIFFRACTION, ELECTRICAL PROPERTIES, HALL EFFECT

Distribution Statement : APPROVED FOR PUBLIC RELEASE