Accession Number : AD0608636

Title :   PN JUNCTION FORMATION TECHNIQUES.

Descriptive Note : Final rept. Oct 63-Aug 64.

Corporate Author : ION PHYSICS CORP BURLINGTON MASS

Report Date : 15 NOV 1964

Pagination or Media Count : 96

Abstract : The report describes investigations on the fabrication of silicon single-crystal cells by ion implantation techniques and thin-film cells by plasma deposition techniques. N on P cell efficiencies were raised to the 13% level through improvements in the implantation process, subsequent heat treatment, and contacting. Control of the junction characteristics and therefore cell spectral response through the inherent control of the implantation technique was conclusively demonstrated. Plasma deposition as a process was studied in detail. Much of the program involved investigations with source feed gases (silicon halides) which were incompatible with formation of semiconductor grade films by this process. Experiments with silicon hydride resulted in functional (low resistivity, doped, highly crystalline, low impurity level) films on foreign substrates (molybdenum and quartz), thereby demonstrating the basic tenets of the plasma deposition process.

Descriptors :   (*SEMICONDUCTORS, PREPARATION), (*SINGLE CRYSTALS, IMPURITIES), (*SEMICONDUCTING FILMS, PREPARATION), ION BEAMS, VAN DE GRAAFF GENERATORS, SILICON, HEAT TREATMENT, SPECTROSCOPY, CRYSTAL GROWTH, PLASMA JETS, SILICON COMPOUNDS, HALIDES, MOLYBDENUM, QUARTZ, SOLAR CELLS, VAPOR PLATING

Distribution Statement : APPROVED FOR PUBLIC RELEASE