Accession Number : AD0608710
Title : PHOTOELECTRIC MILLIMETER WAVE DETECTOR.
Descriptive Note : Final rept.,
Corporate Author : RAYTHEON CO BURLINGTON MASS
Personal Author(s) : Giggey,G. F. ; Debye,P. P. ; Bratt,P. R.
Report Date : OCT 1964
Pagination or Media Count : 63
Abstract : The most emphasis is centered on maximizing the overall performance of n-type indium antimonide which operates by a combination of mechanisms - conventional photoconductivity, magnetically induced energy gap and free carrier absorption. The sample detector operates at liquid helium temperature or below and has the following properties: (a) Peak detectivity at approximately 2 mm wavelength although detectivity range is from 100 microns to over 8 mm. (b) Time constant of 250 nanoseconds. (c) Double dewar package configuration with an integral super-conducting solenoid. Other materials such as impurity activated germanium, gallium arsenide, and indium arsenide were investigated for sensitivity to millimeter and sub-millimeter radiation. Some samples of gallium arsenide were found to be highly sensitive to millimeter radiation of 2 and 4 mm wavelength. A sample of antimony doped germanium grown program was tested unstrained and found to be sensitive in the sub-millimeter wave region (.105 mm). (Author)
Descriptors : (*MILLIMETER WAVES, DETECTORS), (*PHOTOELECTRIC EFFECT, RADIATION MEASURING INSTRUMENTS), (*EXTREMELY HIGH FREQUENCY, DETECTORS), PHOTOCONDUCTIVITY, SEMICONDUCTORS, INTERMETALLIC COMPOUNDS, ANTIMONY ALLOYS, INDIUM ALLOYS, ARSENIC ALLOYS, GALLIUM ALLOYS, GERMANIUM, LOW TEMPERATURE, INFRARED PHOTOCONDUCTORS, INFRARED PHOTOELECTRIC CELLS
Distribution Statement : APPROVED FOR PUBLIC RELEASE