Accession Number : AD0608989

Title :   STUDY OF SURFACE STATES IN SEMICONDUCTORS.

Descriptive Note : Quarterly interim rept. no. 4, 1 Apr-30 Jun 64,

Corporate Author : TYCO LABS INC WALTHAM MASS

Personal Author(s) : Rupprecht ,G. ; Gilbert ,J. ; Smakula,P. H.

Report Date : OCT 1964

Pagination or Media Count : 20

Abstract : Using the pulsed field effect, surface state studies were conducted on silicon surfaces oxidized by two methods, thermal oxidation in steam and anodic oxidation. The n-type samples which were thermally oxidized showed an activation energy of 0.51 eV, capture cross section of 3 x 10 to the 16th power, and density of 10 to the 10th power 1 sq cm. The anodically oxidized samples showed no evidence of surface states. (Author)

Descriptors :   (*SEMICONDUCTORS, SURFACE PROPERTIES), SILICON, CRYSTALS, HEAT OF ACTIVATION, SILICON COMPOUNDS, DIOXIDES, FILMS, OXIDATION, ATOMIC ENERGY LEVELS, DENSITY, ELECTRON CAPTURE, ELECTRON TRANSITIONS, ELECTRICAL CONDUCTIVITY

Distribution Statement : APPROVED FOR PUBLIC RELEASE